Semiconductor device package

ABSTRACT

The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.

BACKGROUND 1. Technical Field

The present disclosure generally relates to a semiconductor device package and a method of manufacturing the same, and to a semiconductor device package including an antenna.

2. Description of the Related Art

Semiconductor device package(s) having antennas for signal (e.g. radio frequency (RF) signal) transmission may include an antenna layer and an RF routing layer electrically connected to the antenna layer. To improve the radiation efficiency of the antenna layer, the antenna layer generally has a substrate with a relatively low dielectric constant (Dk) and loss tangent or dissipation factor (Df), which is different from a substrate of the RF routing layer. Such unbalanced structure would cause a warpage issue during the manufacturing process, which may result in the failure of the semiconductor device package.

SUMMARY

In one or more embodiments, a semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.

In one or more embodiments, a semiconductor device package includes a substrate, a first circuit layer and a second circuit layer. The substrate has a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface of the substrate. The first circuit layer has a first conductive layer and a first dielectric layer at least partially covering the first conductive layer. The second circuit layer is disposed on the first surface of the substrate. The second circuit layer has a second conductive layer and a second dielectric layer at least partially covering the second conductive layer. A dielectric constant (Dk) of the first dielectric layer is less than a Dk of the second dielectric layer.

In one or more embodiments, a method of manufacturing a semiconductor device package includes (a) providing an antenna substrate having a first surface and a second surface opposite to the first surface; (b) connecting a first circuit layer on the first surface of the substrate; (c) connecting a second circuit layer on the first surface of the substrate; and (d) forming a package body to cover the first circuit layer and the second circuit layer, wherein package body further extends between the first circuit layer and the second layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are readily understood from the following detailed description when read with the accompanying figures. It should be noted that various features may not be drawn to scale. The dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1A illustrates a cross-sectional view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 1B illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 1C illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 1D illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 2A illustrates a cross-sectional view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 2B illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 2C illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 2D illustrates a top view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 2E illustrates a cross-sectional view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 3 illustrates a cross-sectional view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 4A illustrates a cross-sectional view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 4B illustrates a cross-sectional view of a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 5A, FIG. 5B, FIG. 5C and FIG. 5D illustrates one or more stages of a method of manufacturing a semiconductor device package in accordance with some embodiments of the present disclosure.

FIG. 6A, FIG. 6B and FIG. 6C illustrates one or more stages of a method of manufacturing a semiconductor device package in accordance with some embodiments of the present disclosure.

Common reference numerals are used throughout the drawings and the detailed description to indicate the same or similar elements. The present disclosure will be more apparent from the following detailed description taken in conjunction with the accompanying drawings.

DETAILED DESCRIPTION

The following disclosure provides for many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below. These are, of course, merely examples and are not intended to be limiting. In the present disclosure, reference to the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. Besides, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Embodiments of the present disclosure are discussed in detail below. It should be appreciated, however, that the present disclosure provides many applicable concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative and do not limit the scope of the disclosure.

FIG. 1A illustrates a cross-sectional view of a semiconductor device package 1 in accordance with some embodiments of the present disclosure. The semiconductor device package 1 includes a substrate 10, an antenna layer 11, circuit layers 12, 13, an electronic component 14 and a package body 15.

The substrate 10 has a surface 101 and a surface 102 opposite to the surface 101. The substrate 10 may be, for example, a printed circuit board, such as a paper-based copper foil laminate, a composite copper foil laminate, or a polymer-impregnated glass-fiber-based copper foil laminate. In some embodiments, the substrate 10 may be a multi-layer substrate which includes a core layer and a conductive material and/or structure. For example, the substrate 10 includes a core portion, and may be in a wafer type, a panel type or a strip type. The substrate 10 may include one or more conductive layers 10 p 1, 10 p 2 in proximity to, adjacent to, or embedded in and exposed at both surfaces (e.g., the surfaces 101 and 102) of the substrate 10. In some embodiments, the substrate 10 includes a through via 10 v penetrating the substrate 10 to electrically connect the conductive layer 10 p 1 with the conductive layer 10 p 2. In some embodiments, a protection layer 10 d (e.g., levelling layer) may be disposed on the surface 101 of the substrate 10 to cover the conductive layer 10 p 1. For example, a lateral surface and a top surface of the conductive layer 10 p 1 may be covered by and in contact with the protection layer 10 d.

In some embodiments, the substrate 10 or a portion of the substrate 10 and the antenna layer 11 may serve as an antenna region. In some embodiments, the through via 10 v of the substrate 10 may serve as a feeding via (or feeding port) of the antenna region. The thickness of the substrate 10 may serve as the height of the resonator (or resonant cavity) for RF signal emitted by or received from the antenna region.

The antenna layer 11 is disposed on the surface 102 of the substrate 10. In some embodiments, the antenna layer 11 is in contact with the substrate 10. For example, the antenna layer 11 is in contact with the surface 102 of the substrate 10. The antenna layer 11 includes one or more conductive layers 11 c 1, 11 c 2 and one or more dielectric layers 11 d. A portion of the conductive layers 11 c is covered or encapsulated by the dielectric layer 11 d while another portion of the conductive layer 11 c is exposed from the dielectric layer 11 d. In some embodiments, the dielectric layer 11 d may cover the conductive layer 10 p 2 of the substrate 10. For example, the conductive layer 10 p 2 is in contact with the dielectric layer 11 d. In some embodiments, the conductive layers 11 c 1, 11 c 2 define or include an antenna pattern. The conductive layers 11 c 1, 11 c 2 may be electromagnetically coupled to the substrate 10 (e.g., to the conductive layer 10 p 2) for signal transmission. In some embodiments, a protection layer 11 s (e.g., solder resist) is disposed on a surface of the dielectric layer 11 d facing away from the substrate 10 to cover a portion of the conductive layer 11 c 2.

In some embodiments, the dielectric layers 11 d may include pre-impregnated composite fibers (e.g., pre-preg), Borophosphosilicate Glass (BPSG), silicon oxide, silicon nitride, silicon oxynitride, Undoped Silicate Glass (USG), any combination of two or more thereof, or the like. Examples of a pre-preg may include, but are not limited to, a multi-layer structure formed by stacking or laminating a number of pre-impregnated materials/sheets. In some embodiments, the conductive layers 11 c 1, 11 c 2 are, or include, a conductive material such as a metal or metal alloy. Examples of the conductive material include gold (Au), silver (Ag), copper (Cu), platinum (Pt), Palladium (Pd), other metal(s) or alloy(s), or a combination of two or more thereof. There may be any number of the dielectric layers 11 d and conductive layers 11 c 1, 11 c 2 depending on different design specifications.

The circuit layer 12 is disposed on the surface 101 of the substrate 10. In some embodiments, the circuit layer 12 is connected to the protection layer 10 d through an adhesive layer 10 h (e.g., a tape or a die attach film (DAF)). The circuit layer 12 includes one or more conductive layers 12 c and one or more dielectric layers 12 d. A portion of the conductive layer 12 c is covered or encapsulated by the dielectric layer 12 d while another portion of the conductive layer 12 c is exposed from the dielectric layer 12 d. In some embodiments, the circuit layer 12 may include conductive vias 12 v (e.g., through vias) penetrating the dielectric layer 12 d, the adhesive layer 10 h and the protection layer 10 d to be electrically connected to the conductive layer 10 p 1. For example, the conductive vias 12 v are in contact with the conductive layer 10 p 1. In some embodiments, the conductive layer 12 c defines or includes an antenna pattern. The conductive layer 12 c may be electrically connected to the substrate 10 (e.g., to the conductive layer 10 p 1) through the conductive via 12 v for signal transmission.

In some embodiments, the dielectric layers 12 d may include pre-impregnated composite fibers (e.g., pre-preg), BPSG, silicon oxide, silicon nitride, silicon oxynitride, USG, any combination of two or more thereof, or the like. Examples of a pre-preg may include, but are not limited to, a multi-layer structure formed by stacking or laminating a number of pre-impregnated materials/sheets. In some embodiments, the dielectric layer 12 d and the dielectric layer 11 d may include the same material. Alternatively, the dielectric layer 12 d and the dielectric layer 11 d may include different materials. In some embodiments, the conductive layer 12 c and the conductive vias 12 v are, or include, a conductive material such as a metal or metal alloy. Examples of the conductive material include Au, Ag, Cu, Pt, Pd, other metal(s) or alloy(s), or a combination of two or more thereof. There may be any number of the dielectric layers 12 d and conductive layers 12 c depending on different design specifications.

In some embodiments, as shown in FIG. 1A, a portion of the antenna layer 11 and a portion of the conductive layer 10 p 2 of the substrate 10 encircled by a dotted-line square may define an antenna A1, and the other portion of the antenna layer 11 and the circuit layer 12 encircled by another dotted-line square may define another antenna A2. In some embodiments, the antenna A1 and the antenna A2 may include different types of antenna. Alternatively, the antenna A1 and the antenna A2 may include the same type of antenna. In some embodiments, the antenna A1 and the antenna A2 may include different operation frequencies or bandwidths. Alternatively, the antenna A1 and the antenna A2 may include the same operation frequency or bandwidth.

The circuit layer 13 (or a routing layer) is disposed on the surface 101 of the substrate 10. The circuit layer 13 is disposed adjacent to the circuit layer 12. For example, as shown in FIG. 1B (which illustrates a top view of the semiconductor device package 1 as shown in FIG. 1A, in accordance with some embodiments of the present disclosure), the circuit layer 13 and the circuit layer 12 are disposed side-by-side on the surface 101 of the substrate 10. For example, as shown in FIG. 1C (which illustrates a top view of the semiconductor device package 1 as shown in FIG. 1A, in accordance with some embodiments of the present disclosure), the circuit layer 12 surrounds the circuit layer 13. For example, as shown in FIG. 1D (which illustrates a top view of the semiconductor device package 1 as shown in FIG. 1A, in accordance with some embodiments of the present disclosure), the circuit layer 13 is disposed between the circuit layers 12. In other words, the circuit layer 13 is sandwiched by the circuit layers 12. In some embodiments, the circuit layer 12 and the circuit layer 13 are disposed at the same altitude with respect to the substrate 10 (or the antenna layer 11).

Referring to FIG. 1A, the circuit layer 13 is connected to the protection layer 10 d through the adhesive layer 10 h. The circuit layer 13 includes one or more conductive layers 13 c and one or more dielectric layers 13 d. A portion of the conductive layer 13 c is covered or encapsulated by the dielectric layer 13 d while another portion of the conductive layer 13 c is exposed from the dielectric layer 13 d. In some embodiments, the circuit layer 13 may include conductive vias 13 v penetrating the dielectric layer 13 d, the adhesive layer 10 h and the protection layer 10 d to be electrically connected to the conductive layer 10 p 1. The conductive layer 13 c may be electrically connected to the substrate 10 (e.g., to the conductive layer 10 p 1) through the conductive via 13 v for signal transmission. In some embodiments, the circuit layer 13 is electrically connected to the circuit layer 12 through the substrate 10 (e.g., through the conductive layer 10 p 1).

In some embodiments, the dielectric layer 13 d may include polymers or any other suitable materials. In some embodiments, a Dk and a Df of the dielectric layer 13 d is higher than a Dk and a Df of the dielectric layers 11 d, 12 d. For example, the dielectric layers 11 d, 12 d have a Dk less than approximately 5. The dielectric layers 11 d, 12 d have a Dk less than approximately approximately 3. The dielectric layers 11 d, 12 d have a Df less than approximately 0.005. The dielectric layers 11 d, 12 d have a Df less than approximately 0.003.

In some embodiments, a rigidity of the dielectric layer 13 d is higher than a rigidity of the dielectric layers 11 d, 12 d. In some embodiments, a coefficient of thermal expansion (CTE) of the dielectric layers 11 d, 12 d is greater than a CTE of the dielectric layer 13 d. For example, the CTE of the dielectric layers 11 d, 12 d is from about 120 K⁻¹ to about 150 K⁻¹, and the CTE of the dielectric layer 13 d is from about 20 K⁻¹ to about 50 K⁻¹. In some embodiments, the dielectric layer 13 d may include fibers, and the dielectric layers 11 d and 12 d do not include fibers.

In some embodiments, the conductive layer 13 c is, or includes, a conductive material such as a metal or metal alloy. Examples of the conductive material include Au, Ag, Cu, Pt, Pd, other metal(s) or alloy(s), or a combination of two or more thereof. There may be any number of the dielectric layers 13 d and conductive layers 13 c depending on different design specifications. In some embodiments, a line/space (L/S or pitch or density) of the conductive layer 12 c of the circuit layer 12 is higher than a L/S of the conductive layer 13 c of the circuit layer 13.

In some embodiments, a thickness of the circuit layer 13 is substantially the same as a thickness of the circuit layer 12. Alternatively, the thickness of the circuit layer 13 is different from the thickness of the circuit layer 12. In some embodiments, the number of the dielectric layers 13 d and conductive layers 13 c of the circuit layer 13 is the same as the number of the dielectric layers 12 d and conductive layers 12 c of the circuit layer 12. Alternatively, the number of the dielectric layers 13 d and conductive layers 13 c of the circuit layer 13 is different from the number of the dielectric layers 12 d and conductive layers 12 c of the circuit layer 12.

The electronic component 14 is disposed on the circuit layer 13 and electrically connected to the circuit layer 13, and electrical connection may be attained by way of flip-chip or wire-bond techniques. The electronic component 14 may be a chip or a die including a semiconductor substrate, one or more integrated circuit devices and one or more overlying interconnection structures therein. The integrated circuit devices may include active devices such as transistors and/or passive devices such resistors, capacitors, inductors, or a combination thereof.

The package body 15 is disposed on the circuit layer 12 and the circuit layer 13 and encapsulates the electronic component 14. In some embodiments, the package body 15 includes an epoxy resin having fillers dispersed therein.

In some comparative embodiments, an antenna layer having a dielectric layer with a relatively low Dk and Df is directly disposed on a circuit layer having a dielectric layer with a relatively high Dk and Df. However, such unbalanced structure would cause a warpage issue (e.g., the warpage is larger than 5 millimeters) during the manufacturing process, which may result in the failure of the semiconductor device package. In accordance with the embodiments, as shown in FIGS. 1A to 1D, there are two kinds of circuit layers (or routing layers) disposed over the antenna layer 11, one (i.e., the circuit layer 12) having the dielectric layer 12 d with the Dk and Df similar or identical to the Dk and Df of the dielectric layer 11 d of the antenna layer 11, and the other (i.e., circuit layer 13) having a relatively high Dk and Df to provide a higher rigidity for the semiconductor device package 1. The warpage issue may be eliminated or mitigated.

In addition, in some embodiments of the present disclosure, since the dielectric layer 12 d of the circuit layer 12 does not have fibers, a pitch of the conductive via 12 v of the circuit layer 12 is less than a pitch of the conductive via 13 v of the circuit layer 13. Hence, the density (or L/S) of the conductive layer 12 c of the circuit layer 12 is higher than the density of the conductive layer 13 c of the circuit layer 13. This would reduce the number of the conductive layers 13 c of the circuit layer 13 required for signal transmission, and the thickness of the semiconductor device package 1 can be reduced as well. In some embodiments, in the case that a ratio of the area of the circuit layer 12 to the area of the circuit layer 13 is about 2:3, the number of the conductive layer 13 c of the circuit layer 13 can be reduced by 1 layer. In the case that the ratio of the area of the circuit layer 12 to the area of the circuit layer 13 is about 1:1, the number of the conductive layer 13 c of the circuit layer 13 can be reduced by 2 layers. In some embodiments, the ratio of the area of the circuit layer 12 to the area of the circuit layer 13 is in a ranger from about 2:3 to about 7:3. In some embodiments, a thickness of the semiconductor device package 1 is equal to or less than 950 micrometers.

FIG. 2A illustrates a cross-sectional view of a semiconductor device package 2A in accordance with some embodiments of the present disclosure. The semiconductor device package 2A is similar to the semiconductor device package 1 as shown in FIG. 1A, except that in FIG. 2A, the electronic component 14 is disposed on the circuit layer 12 and electrically connected to the circuit layer 12.

As shown in FIG. 2B (which illustrates a top view of the semiconductor device package 2A as shown in FIG. 2A, in accordance with some embodiments of the present disclosure), the circuit layer 13 and the circuit layer 12 are disposed side-by-side on the surface 101 of the substrate 10. As shown in FIG. 2C (which illustrates a top view of the semiconductor device package 2A as shown in FIG. 2A, in accordance with some embodiments of the present disclosure), the circuit layer 13 surrounds the circuit layer 12. As shown in FIG. 2D (which illustrates a top view of the semiconductor device package 2A as shown in FIG. 2A, in accordance with some embodiments of the present disclosure), the circuit layer 12 is disposed between the circuit layers 13. In other words, the circuit layer 12 is sandwiched by the circuit layers 13.

FIG. 2E illustrates a cross-sectional view of a semiconductor device package 2E in accordance with some embodiments of the present disclosure. The semiconductor device package 2E is similar to the semiconductor device package 2A as shown in FIG. 2A, except that in FIG. 2A, the circuit layer 12 is electrically connected to the circuit layer 13 through a conductive layer 10 p 3 disposed on the surface 101 of the substrate 10.

FIG. 3 illustrates a cross-sectional view of a semiconductor device package 3 in accordance with some embodiments of the present disclosure. The semiconductor device package 3 is similar to the semiconductor device package 1 as shown in FIG. 1A, and the differences therebetween are described below.

As shown in FIG. 3, a portion 15 a of the package body 15 is disposed between the circuit layer 12 and the circuit layer 13. For example, the circuit layer 12 and the circuit layer 13 are spaced apart from each other through the package body 15. For example, a lateral surface of the circuit layer 12 facing the circuit layer 13 is in contact with the portion 15 a of the package body 15. For example, a lateral surface of the circuit layer 13 facing the circuit layer 12 is in contact with the portion 15 a of the package body 15. Using the package body 15 covering the circuit layer 12 and the circuit layer 13 and extending between the circuit layer 12 and the circuit layer 13 may prevent the circuit layer 12 from being peeled off from the circuit layer 13 (e.g., delamination issue). In some embodiments, a thickness of the portion 15 a of the package body 15 is equal to or greater than 150 micrometers. For example, a distance between the circuit layer 12 and the circuit layer 13 is equal to or greater than 150 micrometers.

FIG. 4A illustrates a cross-sectional view of a semiconductor device package 4A in accordance with some embodiments of the present disclosure. The semiconductor device package 4A is similar to the semiconductor device package 3 as shown in FIG. 3, and the differences therebetween are described below.

A protection layer 30 d (e.g., levelling layer) is disposed on the surface 102 of the substrate 10 to cover the conductive layer 10 p 2. For example, a lateral surface and a top surface of the conductive layer 10 p 2 may be covered by and in contact with the protection layer 30 d.

The antenna layer 11 is connected to the protection layer 30 d through an adhesive layer 30 h (e.g., a tape or a DAF). The antenna layer 11 may include conductive vias 11 v (e.g., through vias) penetrating the dielectric layer 11 d, the adhesive layer 30 h and the protection layer 30 d to be electrically connected to the conductive layer 10 p 2. For example, the conductive vias 11 v are in contact with the conductive layer 10 p 2. The conductive layer 11 c 1 may be electrically connected to the substrate 10 (e.g., to the conductive layer 10 p 2) through the conductive via 11 v for signal transmission. In other embodiments, the conductive via 11 v may be omitted, and the signal transmission may be achieved by magnetically coupling.

FIG. 4B illustrates a cross-sectional view of a semiconductor device package 4B in accordance with some embodiments of the present disclosure. The semiconductor device package 4B is similar to the semiconductor device package 4A as shown in FIG. 4B, and the differences therebetween are described below.

The package body 15 further covers lateral surfaces of the circuit layers 12, 13, the substrate 10 and the antenna layer 11. In some embodiments, a distance between the lateral surface of the circuit layer 12 or 13 and the lateral surface of the package body 15 is in a range from about 2 millimeters to about 3 millimeters.

FIG. 5A, FIG. 5B, FIGS. 5C and 5D are cross-sectional views of a semiconductor device package at various stages of fabrication, in accordance with some embodiments of the present disclosure. At least some of these figures have been simplified for a better understanding of the aspects of the present disclosure. In some embodiments, the method illustrated in FIG. 5A, FIG. 5B, FIGS. 5C and 5D may be used to manufacture the semiconductor device package 1 as shown in FIG. 1A.

Referring to FIG. 5A, a substrate 10 (or core) is provided. Conductive layers 10 p 1 and 10 p 2 are disposed on the surfaces 101 and 102 respectively. One or more through vias 10 v penetrate the substrate 10 to electrically connect the conductive layer 10 p 1 with the conductive layer 10 p 2.

Referring to FIG. 5B, an antenna layer 11 including conductive layers 11 c 1, 11 c 2, a dielectric layer 11 d and a protection layer 11 s (e.g., solder resist) is formed on the surface 102 of the substrate 10. In some embodiments, the antenna layer 11 may be formed on the surface 102 of the substrate 10 by, for example, lamination or any other suitable processes. A protection layer 10 d (e.g., levelling layer) is formed on the surface 101 of the substrate 10 to cover the conductive layer 10 p 1.

Referring to FIG. 5C, a circuit layer 12 including one or more conductive layers 12 c, conductive vias 12 v 1 and dielectric layers 12 d is connected to the protection layer 10 d through an adhesive layer 10 h (e.g., a tape or a DAF). The conductive vias 12 v 1 are electrically connected to the conductive layers 12 c at different layers. A circuit layer 13 including a conductive layer 13 c, a conductive via 13 v 1 and a dielectric layer 13 d is connected to the protection layer 10 d through an adhesive layer 10 h. The conductive vias 13 v 1 are electrically connected to the conductive layers 13 c at different layers.

Referring to FIG. 5D, one or more conductive vias (e.g., through vias) 12 v are formed to penetrate the dielectric layer 12 d, the adhesive layer 10 h and the protection layer 10 d to be electrically connected to the conductive layer 10 p 1. One or more conductive vias (e.g., through vias) 13 v are formed to penetrate the dielectric layer 13 d, the adhesive layer 10 h and the protection layer 10 d to be electrically connected to the conductive layer 10 p 1.

An electronic component 14 is disposed on the circuit layer 13 and electrically connected to the circuit layer 13. A package body 15 is then formed on the circuit layers 12 and 13 to cover the electronic component 14 by, for example, molding or any other suitable techniques.

FIG. 6A, FIGS. 6B and 6C are cross-sectional views of a semiconductor device package at various stages of fabrication, in accordance with some embodiments of the present disclosure. At least some of these figures have been simplified for a better understanding of the aspects of the present disclosure. In some embodiments, the method illustrated in FIG. 6A, FIGS. 6B and 6C may be used to manufacture the semiconductor device package 4A as shown in FIG. 4A. In some embodiments, the operation in FIG. 6A may be carried out after the operation as shown in FIG. 5A.

Referring to FIG. 6A, a protection layer 30 d (e.g., levelling layer) is formed on the surface 102 of the substrate 10 to cover the conductive layer 10 p 2. An antenna layer 11 including conductive layers 11 c 1, 11 c 2, a dielectric layer 11 d and a protection layer 11 s (e.g., solder resist) is connected to the protection layer 30 d through an adhesive layer 30 h (e.g., a tape or a DAF). A protection layer 10 d (e.g., levelling layer) is formed on the surface 101 of the substrate 10 to cover the conductive layer 10 p 1.

Referring to FIG. 6B, a circuit layer 12 including one or more conductive layers 12 c, conductive vias 12 v 1 and dielectric layers 12 d is connected to the protection layer 10 d through an adhesive layer 10 h (e.g., a tape or a DAF). The conductive vias 12 v 1 are electrically connected to the conductive layers 12 c at different layers. A circuit layer 13 including a conductive layer 13 c, a conductive via 13 v 1 and a dielectric layer 13 d is connected to the protection layer 10 d through an adhesive layer 10 h. The conductive vias 13 v 1 are electrically connected to the conductive layers 13 c at different layers. The circuit layer 12 and the circuit layer 13 are spaced apart from each other. For example, there is a gap 15 h between the circuit layer 12 and the circuit layer 13.

Referring to FIG. 6C, one or more conductive vias (e.g., through vias) 12 v are formed to penetrate the dielectric layer 12 d, the adhesive layer 10 h and the protection layer 10 d to be electrically connected to the conductive layer 10 p 1. One or more conductive vias (e.g., through vias) 13 v are formed to penetrate the dielectric layer 13 d, the adhesive layer 10 h and the protection layer 10 d to be electrically connected to the conductive layer 10 p 1.

An electronic component 14 is disposed on the circuit layer 13 and electrically connected to the circuit layer 13. A package body 15 is then formed on the circuit layers 12 and 13 to cover the electronic component 14 by, for example, molding or any other suitable techniques. The package body 15 is further formed within the gap 15 h between the circuit layer 12 and the circuit layer 13. For example, a portion 15 a of the package body 15 is disposed between the circuit layer 12 and the circuit layer 13. For example, a lateral surface of the circuit layer 12 facing the circuit layer 13 is in contact with the portion 15 a of the package body 15, and a lateral surface of the circuit layer 13 facing the circuit layer 12 is in contact with the portion 15 a of the package body 15.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper,” “left,” “right” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly. It should be understood that when an element is referred to as being “connected to” or “coupled to” another element, it may be directly connected to or coupled to the other element, or intervening elements may be present.

As used herein, the terms “approximately”, “substantially”, “substantial” and “about” are used to describe and account for small variations. When used in conduction with an event or circumstance, the terms can refer to instances in which the event or circumstance occurs precisely as well as instances in which the event or circumstance occurs to a close approximation. As used herein with respect to a given value or range, the term “about” generally means within ±10%, ±5%, ±1%, or ±0.5% of the given value or range. Ranges can be expressed herein as from one endpoint to another endpoint or between two endpoints. All ranges disclosed herein are inclusive of the endpoints unless specified otherwise. The term “substantially coplanar” can refer to two surfaces within micrometers (μm) of lying along the same plane, such as within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm of lying along the same plane. When referring to numerical values or characteristics as “substantially” the same, the term can refer to the values lying within ±10%, ±5%, ±1%, or ±0.5% of an average of the values.

The foregoing outlines features of several embodiments and detailed aspects of the present disclosure. The embodiments described in the present disclosure may be readily used as a basis for designing or modifying other processes and structures for carrying out the same or similar purposes and/or achieving the same or similar advantages of the embodiments introduced herein. Such equivalent constructions do not depart from the spirit and scope of the present disclosure, and various changes, substitutions, and alterations may be made without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A semiconductor device package, comprising: an antenna layer having a first coefficient of thermal expansion (CTE); a first circuit layer disposed over the antenna layer, the first circuit layer having a second CTE; and a second circuit layer disposed over the antenna layer, the second circuit layer having a third CTE, wherein a difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.
 2. The semiconductor device package of claim 1, wherein the first circuit layer is disposed adjacent to the second circuit layer, and the first circuit layer and the second circuit layer are disposed at the same altitude with respect to the antenna layer.
 3. The semiconductor device package of claim 2, wherein the first circuit layer surrounds the second circuit layer.
 4. The semiconductor device package of claim 1, wherein the first circuit layer is in contact with the second circuit layer.
 5. The semiconductor device package of claim 1, further comprising a package body covering the first circuit layer and the second circuit layer.
 6. The semiconductor device package of claim 5, wherein the package body further extends between the first circuit layer and the second layer.
 7. The semiconductor device package of claim 1, further comprising a substrate having a first surface and a second surface opposite to the first surface, wherein the first circuit layer and the second circuit layer are disposed on the first surface of the substrate, the antenna layer is disposed on the second surface of the substrate, and the antenna layer and at least a portion of the substrate define an antenna region.
 8. The semiconductor device package of claim 7, wherein the substrate comprises: a first conductive layer disposed on the first surface of the substrate; a second conductive layer disposed on the second surface of the substrate; and a feeding via penetrating the substrate and electrically connecting the first conductive layer with the second conductive layer.
 9. The semiconductor device package of claim 8, wherein the first circuit layer comprises: a third conductive layer; a first dielectric layer at least partially covering the third conductive layer; and a first through via penetrating the first dielectric layer and the first levelling layer to be electrically connected to the first conductive layer.
 10. The semiconductor device package of claim 9, further comprising a first levelling layer disposed on the first surface of the substrate and covering the first conductive layer.
 11. The semiconductor device package of claim 10, further comprising a first adhesive layer connecting the first circuit layer to the first levelling layer, wherein the first through via further penetrates the first adhesive layer.
 12. The semiconductor device package of claim 10, wherein the second circuit layer comprises: a fourth conductive layer; a second dielectric layer at least partially covering the fourth conductive layer; and a second through via penetrating the second dielectric layer and the first levelling layer to be electrically connected to the first conductive layer.
 13. A semiconductor device package, comprising: a substrate having a first surface and a second surface opposite to the first surface; a first circuit layer disposed on the first surface of the substrate, the first circuit layer having a first conductive layer and a first dielectric layer at least partially covering the first conductive layer; and a second circuit layer disposed on the first surface of the substrate, the second circuit layer having a second conductive layer and a second dielectric layer at least partially covering the second conductive layer, wherein a dielectric constant (Dk) of the first dielectric layer is less than a Dk of the second dielectric layer.
 14. The semiconductor device package of claim 13, wherein the first circuit layer is disposed adjacent to the second circuit layer, and the first circuit layer and the second circuit layer are disposed at the same altitude with respect to the substrate.
 15. The semiconductor device package of claim 13, further comprising a package body disposed on the first surface of the substrate and covering the first circuit layer and the second circuit layer.
 16. The semiconductor device package of claim 15, wherein the package body further extends between the first circuit layer and the second layer.
 17. The semiconductor device package of claim 13, further comprising an antenna layer disposed on the second surface of the substrate, wherein the antenna layer further comprises an antenna pattern and a third dielectric layer at least partially covering the antenna pattern.
 18. The semiconductor device package of claim 17, wherein the Dk of the first dielectric layer is substantially the same as a Dk of the third dielectric layer.
 19. The semiconductor device package of claim 13, wherein the substrate comprises a conductive layer disposed on the first surface of the substrate and electrically connecting the first circuit layer with the second circuit layer.
 20. The semiconductor device package of claim 13, wherein the substrate further comprises: a third conductive layer disposed on the first surface of the substrate; a fourth conductive layer disposed on the second surface of the substrate; a conductive via penetrating the substrate and electrically connecting the third conductive layer with the fourth conductive layer; and a levelling layer disposed on the first surface of the substrate and covering the third conductive layer. 